VS-10ETF02S-M3, vs-10etf04s-m3, vs-10etf06s-m3 series www.vishay.com vishay semiconductors revision: 11-feb-16 1 document number: 94884 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 surface mount fast soft recovery rectifier diode, 10 a features ? glass passivated pellet chip junction ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? designed and qualified according to jedec ? -jesd 47 ? material categorization: ? for definitions of compliance please see www.vishay.com/doc?99912 applications ? output rectification and freewheeling in inverters, choppers and converters ? input rectifications wher e severe restrictions on conducted emi should be met description the vs-10etf..s-m3 fast soft recovery rectifier series has been optimized for combined sh ort reverse recovery time and low forward voltage drop. the glass passivation ensures st able reliable operation in the most severe te mperature and power cycling conditions. ? product summary package to-263ab (d 2 pak) i f(av) 10 a v r 200 v, 400 v, 600 v v f at i f 1.2 v i fsm 140 a t rr 50 ns t j max. 150 c diode variation single die snap factor 0.6 ba s e cathode + 2 13 anode -- anode 1 2 3 to-26 3 ab (d 2 pak) major ratings and characteristics symbol characteristics values units v rrm 200 to 600 v i f(av) sinusoidal waveform 10 a i fsm 140 t rr 1 a, 100 a/s 50 ns v f 10 a, t j = 25 c 1.2 v t j range -40 to +150 c voltage ratings part number v rrm , maximum peak reverse voltage v v rsm , maximum non-repetitive peak reverse voltage v i rrm at 150 c ma VS-10ETF02S-M3 200 300 2.5 vs-10etf04s-m3 400 500 vs-10etf06s-m3 600 700 absolute maximum ratings parameter symbol test conditions values units maximum average forward current i f(av) t c = 128 c, 180 conduction half sine wave 10 a maximum peak one cycle ? non-repetitive surge current i fsm 10 ms sine pulse, rated v rrm applied 115 10 ms sine pulse, no voltage reapplied 140 maximum i 2 t for fusing i 2 t 10 ms sine pulse, rated v rrm applied 66 a 2 s 10 ms sine pulse, no voltage reapplied 94 maximum i 2 ? t for fusing i 2 ? t t = 0.1 ms to 10 ms, no voltage reapplied 940 a 2 ? s
VS-10ETF02S-M3, vs-10etf04s-m3, vs-10etf06s-m3 series www.vishay.com vishay semiconductors revision: 11-feb-16 2 document number: 94884 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) when mounted on 1" square (650 mm 2 ) pcb of fr-4 or g-10 material 4 oz. (140 m) copper 40 c/w. ? for recommended footprint and soldering tech niques refer to appl ication note #an-994. electrical specifications parameter symbol test conditions values units maximum forward voltage drop v fm 10 a, t j = 25 c 1.2 v forward slope resistance r t t j = 150 c 12.7 m ? threshold voltage v f(to) 1.25 v maximum reverse leakage current i rm t j = 25 c v r = rated v rrm 0.1 ma t j = 150 c 2.5 recovery characteristics parameter symbol test conditions values units reverse recovery time t rr i f at 10 a pk ? 25 a/s ? 25 c 200 ns reverse recovery current i rr 2.75 a reverse recovery charge q rr 0.32 c snap factor s 0.6 thermal - mechanical specifications parameter symbol test conditions values units maximum junction and storage ? temperature range t j , t stg -40 to +150 c maximum thermal resistance ? junction to case r thjc dc operation 1.5 c/w maximum thermal resistance ? junction to ambient (pcb mount) r thja (1) 40 soldering temperature t s 260 c approximate weight 2g 0.07 oz. marking device case style d 2 pak (smd 220) 10etf02s 10etf04s 10etf06s i fm t rr dir dt i rm(rec) q rr t
VS-10ETF02S-M3, vs-10etf04s-m3, vs-10etf06s-m3 series www.vishay.com vishay semiconductors revision: 11-feb-16 3 document number: 94884 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - current rati ng characteristics fig. 2 - current rati ng characteristics fig. 3 - forward power loss characteristics fig. 4 - forward power loss characteristics fig. 5 - maximum non-re petitive surge current fig. 6 - maximum non-re petitive surge current 0 6 maximum allowable case temperature (c) average forward current (a) 4 28 10 12 120 125 130 135 140 145 150 60 30 90 180 10etf..s series r thjc (dc) = 1.5 c/w 120 conduction angle ? 010 maximum allowable case temperature (c) average forward current (a) 6 212 16 48 14 120 125 130 135 140 145 150 60 30 180 dc 90 120 10etf..s series r thjc (dc) = 1.5 c/w ? conduction period 4 0 16 0 maximum average forward power loss (w) average forward current (a) 8 10 10 10etf..s series t j = 150 c 12 8 46 180 rms limit conduction angle 2 2 6 14 60 30 90 120 ? 4 0 20 0 maximum average forward power loss (w) average forward current (a) 12 12 16 10etf..s series t j = 150 c 16 8 ? conduction period dc 48 60 30 180 90 120 rms limit peak half sine wave forward current (a) number of equal amplitude half cycle current pulses (n) 1 10 100 30 40 50 60 70 80 90 100 110 120 130 v s -10etf.. s s erie s at any rated load condition and with rated vrrm applied following s urge. initial tj = 150c at 60 hz 0.0083 s at 50 hz 0.0100 s peak half sine wave forward current (a) pulse train duration (s) 0.01 0.1 1 10 10 30 50 70 90 110 130 150 maximum non-repetitive s urge current ver s u s pul s e train duration. initial tj = tj max. no voltage reapplied rated vrrm reapplied v s -10etf.. s s erie s
VS-10ETF02S-M3, vs-10etf04s-m3, vs-10etf06s-m3 series www.vishay.com vishay semiconductors revision: 11-feb-16 4 document number: 94884 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 7 - forward voltage drop characteristics fig. 8 - recovery time characteristics, t j = 25 c fig. 9 - recovery time characteristics, t j = 150 c fig. 10 - recovery charge characteristics, t j = 25 c fig. 11 - recovery charge characteristics, t j = 150 c fig. 12 - recovery current characteristics, t j = 25 c 100 10 1 0.5 1.0 1.5 2.0 2.5 3.0 instantaneous forward current (a) instantaneous forward voltage (v) t j = 150 c t j = 25 c 10etf..s series 0.40 0.30 0 0 40 80 120 160 200 t rr - typiacl reverse recovery time (s) di/dt - rate of fall of forward current (a/s) 10etf..s series t j = 25 c 0.10 0.20 i fm = 20 a i fm = 1 a i fm = 10 a i fm = 2 a i fm = 5 a i fm = 8 a 0.4 0.3 0 0 40 80 120 160 200 t rr - typiacl reverse recovery time (s) di/dt - rate of fall of forward current (a/s) 10etf..s series t j = 150 c 0.1 0.2 i fm = 20 a i fm = 1 a i fm = 10 a i fm = 5 a i fm = 2 a 1.4 0.6 0 0 40 80 120 160 200 q rr - typiacl reverse recovery charge (c) di/dt - rate of fall of forward current (a/s) 10etf..s series t j = 25 c 0.2 0.4 1.0 0.8 1.2 i fm = 20 a i fm = 1 a i fm = 10 a i fm = 5 a i fm = 2 a 2.5 1.5 0 0 40 80 120 160 200 q rr - typiacl reverse recovery charge (c) di/dt - rate of fall of forward current (a/s) 10etf..s series t j = 150 c 0.5 1.0 2.0 i fm = 20 a i fm = 1 a i fm = 10 a i fm = 5 a i fm = 2 a 15 9 0 0 40 80 120 160 200 i rr - typiacl reverse recovery current (a) di/dt - rate of fall of forward current (a/s) 10etf..s series t j = 25 c 3 6 12 i fm = 20 a i fm = 1 a i fm = 10 a i fm = 5 a i fm = 2 a
VS-10ETF02S-M3, vs-10etf04s-m3, vs-10etf06s-m3 series www.vishay.com vishay semiconductors revision: 11-feb-16 5 document number: 94884 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 13 - recovery current characteristics, t j = 150 c fig. 14 - thermal impedance z thjc characteristics 20 12 0 0 40 80 120 160 200 i rr - typiacl reverse recovery current (a) di/dt - rate of fall of forward current (a/s) 10etf..s series t j = 150 c 4 8 16 i fm = 20 a i fm = 1 a i fm = 10 a i fm = 5 a i fm = 2 a 0.1 0.01 0.001 1 10 10 0.001 0.01 0.1 1 square wave pulse duration (s) z thjc - transient thermal impedance (c/w) single pulse steady state value (dc operation) 10etf..s series d = 0.50 d = 0.33 d = 0.25 d = 0.17 d = 0.08
VS-10ETF02S-M3, vs-10etf04s-m3, vs-10etf06s-m3 series www.vishay.com vishay semiconductors revision: 11-feb-16 6 document number: 94884 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table ordering information (example) preferred p/n quantity per t/r minimum order quantity packaging description VS-10ETF02S-M3 50 1000 anti static plastic tubes vs-10etf02strr-m3 800 800 13" diameter reel vs-10etf02strl-m3 800 800 13" diameter reel vs-10etf04s-m3 50 1000 anti static plastic tubes vs-10etf04strr-m3 800 800 13" diameter reel vs-10etf04strl-m3 800 800 13" diameter reel vs-10etf06s-m3 50 1000 anti static plastic tubes vs-10etf06strr-m3 800 800 13" diameter reel vs-10etf06strl-m3 800 800 13" diameter reel links to related documents dimensions www.vishay.com/doc?95046 part marking information www.vishay.com/doc?95444 packaging information www.vishay.com/doc?95032 2 - current rating (10 = 10 a) 3 - circuit configuration: e = single diode 4 - package: t = d 2 pak 5 - type of silicon: f = fast soft recovery rectifier 6 - voltage code x 100 = v rrm 7 - s = surface mountable - -m3 = halogen-free, rohs-compliant, and terminations lead (pb)-free 8 - none = tube trr = tape and reel (right oriented) trl = tape and reel (left oriented) 9 02 = 200 v 04 = 400 v 06 = 600 v 1 - vishay semiconductors product device code 5 1 3 2 4 6 7 8 9 vs- 10 e t f 06 s trl -m3
outline dimensions www.vishay.com vishay semiconductors revision: 08-jul-15 1 document number: 95046 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 d 2 pak dimensions in millimeters and inches notes (1) dimensioning and tolerancing per asme y14.5 m-1994 (2) dimension d and e do not include mold flas h. mold flash shall not exceed 0.127 mm (0 .005") per side. these dimensions are measu red at the outmost extremes of the plastic body (3) thermal pad contour optional with in dimension e, l1, d1 and e1 (4) dimension b1 and c1 a pply to base metal only (5) datum a and b to be dete rmined at datum plane h (6) controlling dimension: inch (7) outline conforms to jedec ? outline to-263ab symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.06 4.83 0.160 0.190 d1 6.86 8.00 0.270 0.315 3 a1 0.00 0.254 0.000 0.010 e 9.65 10.67 0.380 0.420 2, 3 b 0.51 0.99 0.020 0.039 e1 7.90 8.80 0.311 0.346 3 b1 0.51 0.89 0.020 0.035 4 e 2.54 bsc 0.100 bsc b2 1.14 1.78 0.045 0.070 h 14.61 15.88 0.575 0.625 b3 1.14 1.73 0.045 0.068 4 l 1.78 2.79 0.070 0.110 c 0.38 0.74 0.015 0.029 l1 - 1.65 - 0.066 3 c1 0.38 0.58 0.015 0.023 4 l2 1.27 1.78 0.050 0.070 c2 1.14 1.65 0.045 0.065 l3 0.25 bsc 0.010 bsc d 8.51 9.65 0.335 0.380 2 l4 4.78 5.28 0.188 0.208 c b detail a c2 a a a 0.004 b m a lead tip (3) (3) view a - a (e) (d1) e1 b h a1 detail ?a? rotated 90 cw scale: 8 :1 l gauge plane 0 to 8 l3 l4 seating plane section b - b and c - c scale: none (4) (4) ( b , b 2) b 1, b 3 (c) c1 base metal plating conforms to jedec ? outline d 2 pak (smd-220) 13 2 d c a l2 e (2)(3) (2) 4 h bb 2 x b 2 x b 2 l1 0.010 a b m m (3) e 2 x pad layout min. 11.00 (0.43) min. 9.65 (0.3 8 ) min. 3. 8 1 (0.15) min. 2.32 (0.0 8 ) 17.90 (0.70) 15.00 (0.625) 2.64 (0.103) 2.41 (0.096)
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